Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments | |
Chen Wu1; Xudong Fang1; Qiang Kang1; Ziyan Fang1; Junxia Wu1; Hongtao He3; Dong Zhang1; Libo Zhao1; Bian Tian1; Ryutaro Maeda1; Zhuangde Jiang1 | |
发表期刊 | MICROSYSTEMS & NANOENGINEERING |
ISSN | 2055-7434 |
2023 | |
卷号 | 9期号:1页码:1-18 |
英文摘要 | Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used and offer the benefits of miniaturization and high precision. However, they cannot easily withstand high temperatures exceeding 150?°C because of intrinsic material limits. Herein, we proposed and executed a systematic and full-process study of SiC-based MEMS pressure sensors that operate stably from ?50 to 300?°C. First, to explore the nonlinear piezoresistive effect, the temperature coefficient of resistance (TCR) values of 4H-SiC piezoresistors were obtained from ?50 to 500?°C. A conductivity variation model based on scattering theory was established to reveal the nonlinear variation mechanism. Then, a piezoresistive pressure sensor based on 4H-SiC was designed and fabricated. The sensor shows good output sensitivity (3.38?mV 2 SO 4 and NaOH solutions and its radiation tolerance under 5?W X-rays. Accordingly, the sensor developed in this work has high potential to measure pressure in high-temperature and extreme environments such as are faced in geothermal energy extraction, deep well drilling, aeroengines and gas turbines. |
语种 | 英语 |
文献类型 | 期刊论文 |
条目标识符 | http://ir.yic.ac.cn/handle/133337/34545 |
专题 | 中国科学院烟台海岸带研究所 |
作者单位 | 1.西安交通大学 2.中国科学院烟台海岸带研究所 3.HeBei Semiconductor Research Institute |
推荐引用方式 GB/T 7714 | Chen Wu,Xudong Fang,Qiang Kang,et al. Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments[J]. MICROSYSTEMS & NANOENGINEERING,2023,9(1):1-18. |
APA | Chen Wu.,Xudong Fang.,Qiang Kang.,Ziyan Fang.,Junxia Wu.,...&Zhuangde Jiang.(2023).Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments.MICROSYSTEMS & NANOENGINEERING,9(1),1-18. |
MLA | Chen Wu,et al."Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments".MICROSYSTEMS & NANOENGINEERING 9.1(2023):1-18. |
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